SI4348DY datasheet(3/5 Pages) VISHAY

Numer części	SI4348DY

Szczegółowy opis	N-Channel 30-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Si4348DY

Vishay Siliconix

New Product

Document Number: 72790

S-40438—Rev. A, 15-Mar-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

520

1040

1560

2080

2600

0

5

10

15

20

25

30

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

1

2

3

4

5

6

0

4

8

12

16

20

0.000

0.004

0.008

0.012

0.016

0.020

0

1020304050

VDS − Drain-to-Source Voltage (V)

Crss

VDS = 15 V

ID = 11 A

ID − Drain Current (A)

VGS = 10 V

ID = 11 A

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.01

0.02

0.03

0.04

0.05

02468

10

TJ = 25_C

ID = 11 A

50

10

0.1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

VGS = 4.5 V

TJ = 150_C

VGS = 10 V

Coss

Ciss

1

Podobny numer części - SI4348DY

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Podobny opis - SI4348DY

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
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	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

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