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MMDF3N03HD Dane(HTML) 2 Page - ON Semiconductor

Numer części MMDF3N03HD
Szczegółowy opis  Power MOSFET 3 Amps, 30 Volts
Pobierz  12 Pages
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MMDF3N03HD Datasheet(Arkusz danych) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
34.5
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.7
3.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
0.06
0.065
0.07
0.075
Ohms
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
2.0
3.6
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0 Vd
Ciss
450
630
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
160
225
Transfer Capacitance
f = 1.0 MHz)
Crss
35
70
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
12
24
ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS =45Vdc
tr
65
130
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 9.1 Ω)
td(off)
16
32
Fall Time
RG 9.1 Ω)
tf
19
38
Turn–On Delay Time
td(on)
8
16
ns
Rise Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS =10Vdc
tr
15
30
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
td(off)
30
60
Fall Time
RG 9.1 Ω)
tf
23
46
Gate Charge
QT
11.5
16
nC
(VDS = 10 Vdc, ID = 3.0 Adc,
Q1
1.5
(VDS 10 Vdc, ID 3.0 Adc,
VGS = 10 Vdc)
Q2
3.5
Q3
2.8
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.82
0.7
1.2
Vdc
Reverse Recovery Time
SFi
12
(I
30Ad
V
0Vd
trr
24
ns
See Figure 12
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
17
dIS/dt = 100 A/µs)
tb
7
Reverse Recovery Storage Charge
QRR
0.025
µC
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.


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