Zakładka z wyszukiwarką danych komponentów |
|
AM1214-130 Arkusz danych(PDF) 1 Page - STMicroelectronics |
|
AM1214-130 Arkusz danych(HTML) 1 Page - STMicroelectronics |
1 / 4 page 1/4 TARGET DATA July 2000 AM1214-130 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METAL/CERAMIC HERMETIC PACKAGE • POUT = 130 W MIN. WITH 8.0 dB GAIN • 1215-1400 MHz OPERATION DESCRIPTION The AM1214-130 is a rugged, Class C common base device designed as driver of AM1214-250 for new L - Band medium & long pulse radar applica- tions. Minimal amplitude droop over a long pulse of 500 microsec. is guaranteed by a thermal design incor- porating an overlay site-ballasted die geometry. PIN CONNECTION 1 3 42 1. Collector 2. Base 3. Emitter 4. Base M259 hermetically sealed ORDER CODE AM1214-130 BRANDING XAM1214-130 ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation (TC ≤ 85°C)* TBD W IC Device Current* 12 A VCBO Collector-Base Voltage 70 V Tj Operating Junction Temperature +250 °C TSTG Storage Temperature -65 to +200 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance* TBD °C/W * Applies only to rated RF amplifier operation: 150 microsec / 10% |
Podobny numer części - AM1214-130 |
|
Podobny opis - AM1214-130 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |