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SI6466ADQ Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI6466ADQ Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested Si6466ADQ Vishay Siliconix Document Number: 71182 S-31725—Rev. B, 18-Aug-03 www.vishay.com 1 N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 20 0.014 @ VGS = 4.5 V 8.1 20 0.020 @ VGS = 2.5 V 6.6 D S S G 1 2 3 4 8 7 6 5 D S S D TSSOP-8 Top View D D G S* N-Channel MOSFET * Source Pins 2, 3, 6 and 7 must be tied common. Ordering Information: Si6466ADQ-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS "8 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 8.1 6.8 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 6.6 5.4 A Pulsed Drain Current (10 ms Pulse Width) IDM 30 A Continuous Source Current (Diode Conduction)a IS 1.35 0.95 Maximum Power Dissipationa TA = 25_C PD 1.5 1.05 W Maximum Power Dissipationa TA = 70_C PD 1.0 0.67 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 65 83 Maximum Junction-to-Ambienta Steady State RthJA 100 120 _C/W Maximum Junction-to-Foot Steady State RthJF 43 52 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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