SI4346DY-E3 datasheet(1/6 Pages) VISHAY

Numer części	SI4346DY-E3

Szczegółowy opis	N-Channel 30-V (D-S) MOSFET

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FEATURES

D TrenchFETr Gen II Power MOSFET

D 100% Rg Tested

APPLICATIONS

D High-Side DC/DC Conversion

− Notebook

− Desktop

− Server

D Notebook Logic DC/DC, Low-Side

Si4346DY

Vishay Siliconix

New Product

Document Number: 72958

S-41793—Rev. B, 04-Oct-04

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

Qg (Typ)

0.023 @ VGS = 10 V

8

30

0.025 @ VGS = 4.5 V

7.5

65

30

0.030 @ VGS = 3.0 V

6.8

6.5

0.036 @ VGS = 2.5 V

6.0

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4346DY—E3

Si4346DY-T1—E3 ( with Tape and Reel)

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

8

5.9

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

6.5

4.7

A

Pulsed Drain Current

IDM

30

A

Continuous Source Current (Diode Conduction)a

IS

2.2

1.20

Maximum Power Dissipationa

TA = 25_C

PD

2.5

1.31

W

Maximum Power Dissipationa

TA = 70_C

PD

1.6

0.84

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

43

50

Maximum Junction-to-Ambienta

Steady State

RthJA

74

95

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

22

27

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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Podobny opis - SI4346DY-E3

Producent	Numer części	Arkusz danych	Szczegółowy opis
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Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
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