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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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PK650DY Dane(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK650DY Datasheet(Arkusz danych) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK650DY Dual N-Channel Enhancement Mode MOSFET Q2 Q1 Q2 Q1 THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS Q2 Q1 Q2 Q1 1Pulse width limited by maximum junction temperature T J(MAX)=150° C. 2The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.The value in any given application depends on the user's specific board design. 3Package limitation current :Q1=29A,Q2=42A. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Q2 ±100 Q1 ±100 Q2 1 Q1 1 Q2 10 Q1 10 Q2 2.1 3.8 Q1 10 14 Q2 1.6 2.8 Q1 6.8 11 Q2 55 Q1 40 VGS = 10V, ID = 10A mΩ Drain-Source On-State Resistance 1 RDS(ON) VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage V(BR)DSS IGSS VGS = 0V, ID = 250mA mA PARAMETER SYMBOL VDS = 0V, VGS = ±20V VGS = 4.5V, ID = 16A 51 3.4 Junction-to-Case Junction-to-Ambient 2 STATIC LIMITS CH. °C / W TJ, TSTG 1.3 60 4.4 TA = 25 °C W Gate-Body Leakage 2 -55 to 150 Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 °C RqJA RqJC TEST CONDITIONS VGS(th) TEST CONDITIONS Gate Threshold Voltage SYMBOL THERMAL RESISTANCE Operating Junction & Storage Temperature Range PD MAXIMUM °C 1.5 2.4 TA = 70 °C Power Dissipation UNITS V nA Forward Transconductance 1 gfs VDS = 5V, ID = 20A VDS = 5V, ID = 10A S VGS = 4.5V, ID = 10A VGS = 10V, ID = 20A REV 1.0 2 2017/1/5 |
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