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PK650DY Dane(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Numer części PK650DY
Szczegółowy opis  Dual N-Channel Enhancement Mode MOSFET
Pobierz  11 Pages
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Producent  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Strona internetowa  http://www.unikc.com.cn/
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PK650DY Datasheet(Arkusz danych) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

 
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PK650DY
Dual N-Channel Enhancement Mode MOSFET
Q2
Q1
Q2
Q1
THERMAL RESISTANCE RATINGS
CH. TYPICA
L
UNITS
Q2
Q1
Q2
Q1
1Pulse width limited by maximum junction temperature T
J(MAX)=150°
C.
2The value of Rq
JA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
3Package limitation current :Q1=29A,Q2=42A.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
MIN
TYP
MAX
Q2
30
Q1
30
Q2
1.3
1.75
2.3
Q1
1.3
1.75
2.3
Q2
±100
Q1
±100
Q2
1
Q1
1
Q2
10
Q1
10
Q2
2.1
3.8
Q1
10
14
Q2
1.6
2.8
Q1
6.8
11
Q2
55
Q1
40
VGS = 10V, ID = 10A
Drain-Source On-State
Resistance
1
RDS(ON)
VDS = VGS, ID = 250mA
Drain-Source Breakdown Voltage
V(BR)DSS
IGSS
VGS = 0V, ID = 250mA
mA
PARAMETER
SYMBOL
VDS = 0V, VGS = ±20V
VGS = 4.5V, ID = 16A
51
3.4
Junction-to-Case
Junction-to-Ambient
2
STATIC
LIMITS
CH.
°C / W
TJ, TSTG
1.3
60
4.4
TA = 25 °C
W
Gate-Body Leakage
2
-55 to 150
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V,
VGS = 0V , TJ = 55 °C
RqJA
RqJC
TEST CONDITIONS
VGS(th)
TEST CONDITIONS
Gate Threshold Voltage
SYMBOL
THERMAL RESISTANCE
Operating Junction & Storage Temperature Range
PD
MAXIMUM
°C
1.5
2.4
TA = 70 °C
Power Dissipation
UNITS
V
nA
Forward Transconductance
1
gfs
VDS = 5V, ID = 20A
VDS = 5V, ID = 10A
S
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 20A
REV 1.0
2
2017/1/5


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