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PK650DY Dane(HTML) 3 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Numer części PK650DY
Szczegółowy opis  Dual N-Channel Enhancement Mode MOSFET
Pobierz  11 Pages
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Producent  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Strona internetowa  http://www.unikc.com.cn/
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PK650DY Datasheet(Arkusz danych) 3 Page - Wuxi U-NIKC Semiconductor CO.,LTD

 
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PK650DY
Dual N-Channel Enhancement Mode MOSFET
Q2
3685
Q1
531
Q2
615
Q1
147
Q2
388
Q1
67
Q2
1
Q1
1
Q2
72
Q1
10
Q2
37
Q1
5.6
Q2
10
Q1
1.4
Q2
18
Q1
3
Q2
32
Q1
15
Q2
16
Q1
13
Q2
72
Q1
21
Q2
10
Q1
15
Q2
36
Q1
23
Q2
1
Q1
1.2
Q2
28
Q1
8.8
Q2
13
Q1
1.2
1Pulse test : Pulse Width
 300 msec, Duty Cycle  2%.
2Independent of operating temperature.
3Package limitation current :Q1=29A,Q2=42A.
Gate-Source Charge
2
DYNAMIC
DYNAMIC
Input Capacitance
VGS = 0V,
VDS = 15V, f = 1MHz
Total Gate Charge
2
Qg
VGS=4.5V
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
td(on)
Q2
VDS = 15V, ID @ 20A,
VGS=10V, RGEN= 6Ω
Q1
VDS = 15V , ID @ 10A,
VGS = 10V, RGEN =6Ω
nS
Rise Time
2
pF
Gate Resistance
Rg
VGS = 0V,
VDS = 0V, f = 1MHz
Ω
VGS=10V
IS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
A
Qgs
Gate-Drain Charge
2
Qgd
Q2
VDS = 15V , ID = 20A
Q1
VDS = 15V , ID = 10A
nC
Turn-On Delay Time
2
IF = 10A, VGS = 0V
V
Reverse Recovery Time
trr
tr
Turn-Off Delay Time
2
td(off)
Fall Time
2
tf
Continuous Current
3
Reverse Recovery Charge
Qrr
Q2
IF = 20A, dlF/dt = 100A /ms
Q1
IF = 10A, dlF/dt = 100A /mS
nS
nC
Forward Voltage
1
VSD
IF = 20A, VGS = 0V
REV 1.0
3
2017/1/5


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