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PK632BA Dane(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Numer części PK632BA
Szczegółowy opis  N-Channel Enhancement Mode MOSFET
Pobierz  8 Pages
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Producent  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Strona internetowa  http://www.unikc.com.cn/
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PK632BA Datasheet(Arkusz danych) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

   
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PK632BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 40A.
4The Power dissipation is based on Rq
JA t ≦10s value.
Junction-to-Ambient
2
Steady-State
RqJA
48
Junction-to-Case
Steady-State
27
TA= 70 °C
22
Power Dissipation
4
TA = 25 °C
4.6
Continuous Drain Current
TA = 25 °C
ID
W
mJ
29
RqJA
PD
W
2.9
Power Dissipation
TJ, Tstg
PD
t ≦10s
Junction-to-Ambient
2
Pulsed Drain Current
1
80
TA = 70 °C
TC = 100 °C
ID
TC = 25 °C
30V
Continuous Drain Current
3
TC = 100 °C
PARAMETERS/TEST CONDITIONS
RDS(ON)
Drain-Source Voltage
3.3mΩ @V
GS = 10V
88A
THERMAL RESISTANCE
Avalanche Energy
L =0.1mH
RqJC
LIMITS
TC = 25 °C
EAS
MAXIMUM
Avalanche Current
IAS
40
UNITS
150
70
TYPICAL
VDS
30
V
ID
IDM
SYMBOL
Operating Junction & Storage Temperature Range
SYMBOL
°C
-55 to 150
27
VGS
Gate-Source Voltage
A
V
2.7
°C / W
46
88
±20
REV 1.2
1
2016/6/23


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