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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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PK632BA Arkusz danych(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK632BA Arkusz danych(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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2 / 8 page  PK632BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX 30 1.5 1.9 2.35 ±100 nA 1 10 3 4 2.1 3.3 62 S 2096 393 229 1.5 Ω VGS =10V 42 VGS =4.5V 22 6.6 11 25 15 54 17 46 A 1 V 28 nS 15 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 40A. LIMITS PARAMETER Output Capacitance VGS = 10V , ID = 20A VDS = 20V, VGS = 0V, TJ = 55 °C SYMBOL VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge 2 Gate-Source Charge 2 Reverse Transfer Capacitance Gate Resistance Qg Total Gate Charge 2 Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Rise Time 2 Turn-Off Delay Time 2 Fall Time 2 Gate Threshold Voltage Drain-Source On-State Resistance 1 Rg IF = 20A, VGS = 0V nS VDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) td(on) tr td(off) tf Turn-On Delay Time 2 Qrr Reverse Recovery Charge Continuous Current 3 Forward Voltage 1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ±20V gfs RDS(ON) Forward Transconductance 1 STATIC V(BR)DSS TEST CONDITIONS IF = 20A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 16A V REV 1.2 2 2016/6/23 |
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