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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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PK630HY Arkusz danych(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK630HY Arkusz danych(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 11 page  PK630HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS CH. 30V Q2 30V Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) CH. Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Power Dissipation 150 64 ±20 PD W 37 61 35 PARAMETERS/TEST CONDITIONS 4.9mΩ @V GS = 10V 7.8mΩ @V GS = 10V mJ ID 30 LIMITS Continuous Drain Current UNITS UNITS ID RDS(ON) 22 17 TA = 25 °C IAS 64A 40 Avalanche Energy 21 14 15 L = 0.1mH EAS TC = 25 °C TA = 70 °C 21 15 40A SYMBOL Drain-Source Voltage 30 Pulsed Drain Current 1 90 VDS ID IDM ±20 14 11 TC = 100 °C Continuous Drain Current 3 25 A 24 Gate-Source Voltage V Avalanche Current VGS TC = 100 °C TC = 25 °C 40 9.6 REV 1.0 1 2017/1/3 |
Podobny numer części - PK630HY |
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Podobny opis - PK630HY |
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