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PK618BA Dane(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Numer części PK618BA
Szczegółowy opis  N-Channel Enhancement Mode MOSFET
Pobierz  5 Pages
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Producent  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Strona internetowa  http://www.unikc.com.cn/
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PK618BA Datasheet(Arkusz danych) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

   
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PK618BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 26A.
TA= 70 °C
12
Power Dissipation
TA = 25 °C
2.5
Continuous Drain Current
TA = 25 °C
ID
RqJA
PD
W
1.6
15
TC = 100 °C
Power Dissipation
TJ, Tstg
PD
±20
Pulsed Drain Current
1
48
TA = 70 °C
13
ID
Tc = 25 °C
30V
Continuous Drain Current
3
Tc = 100 °C
PARAMETERS/TEST CONDITIONS
RDS(ON)
Drain-Source Voltage
5.5mΩ @V
GS = 10V
59A
Junction-to-Ambient
2
THERMAL RESISTANCE
Avalanche Energy
L =0.1mH
Junction-to-Case
RqJC
TC = 25 °C
EAS
MAXIMUM
Avalanche Current
IAS
31
W
mJ
UNITS
150
37
TYPICAL
VDS
30
ID
IDM
SYMBOL
LIMITS
Operating Junction & Storage Temperature Range
SYMBOL
°C
-55 to 150
50
VGS
Gate-Source Voltage
V
A
3.6
°C / W
34
59
REV 1.0
1
2014/7/10


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