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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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PK618BA Dane(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK618BA Datasheet(Arkusz danych) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK618BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 26A. TA= 70 °C 12 Power Dissipation TA = 25 °C 2.5 Continuous Drain Current TA = 25 °C ID RqJA PD W 1.6 15 TC = 100 °C Power Dissipation TJ, Tstg PD ±20 Pulsed Drain Current 1 48 TA = 70 °C 13 ID Tc = 25 °C 30V Continuous Drain Current 3 Tc = 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 5.5mΩ @V GS = 10V 59A Junction-to-Ambient 2 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC TC = 25 °C EAS MAXIMUM Avalanche Current IAS 31 W mJ UNITS 150 37 TYPICAL VDS 30 ID IDM SYMBOL LIMITS Operating Junction & Storage Temperature Range SYMBOL °C -55 to 150 50 VGS Gate-Source Voltage V A 3.6 °C / W 34 59 REV 1.0 1 2014/7/10 |
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