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Zakładka z wyszukiwarką danych komponentów |
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AO9926A Dane(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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AO9926A Datasheet(Arkusz danych) 4 Page - VBsemi Electronics Co.,Ltd |
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 40 10 1 TJ - Temperature (°C) - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 0 1234 5 ID = 7.1 A 0 6 12 18 24 30 0.01 0.10 1.00 10.00 Time (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10-4 10-3 10-2 10-1 110 30 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AO9926A 4 |
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