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AO9926A Dane(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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AO9926A Datasheet(Arkusz danych) 1 Page - VBsemi Electronics Co.,Ltd |
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FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 20 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 7.1 A TA = 70 °C 5.7 Pulsed Drain Current (10 µs Pulse Width) IDM 40 Continuous Source Current (Diode Conduction)a IS 1.7 Maximum Power Dissipationa TA = 25 °C PD 2 W TA = 70 °C 1.3 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 62.5 °C/W Dual N-Channel 20-V (D-S) MOSFET www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AO9926A 1 |
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