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TIP29C Arkusz danych(PDF) 2 Page - ON Semiconductor |
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TIP29C Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 4 page TIP29B TIP29C TIP30B TIP30C 2 Motorola Bipolar Power Transistor Device Data 0.03 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMP) 0.03 0.5 5.0 70 3.0 100 7.0 300 30 0.1 0.3 0.07 1.0 TJ = 150°C 25 °C – 55 °C VCE = 2.0 V 500 10 50 3.0 Figure 2. Turn–Off Time IC, COLLECTOR CURRENT (AMP) IB1 = IB2 IC/IB = 10 ts′ = ts – 1/8 tf TJ = 25°C ts′ TURN–ON PULSE APPROX +11 V Vin 0 VEB(off) t1 APPROX +11 V Vin t2 TURN–OFF PULSE t3 t1 ≤ 7.0 ns 100 < t2 < 500 µs t3 < 15 ns DUTY CYCLE ≈ 2.0% APPROX – 9.0 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. SCOPE RC RB VCC Vin Cjd << Ceb – 4.0 V Figure 3. Switching Time Equivalent Circuit 0.03 Figure 4. Turn–On Time IC, COLLECTOR CURRENT (AMP) 0.02 0.1 3.0 0.07 1.0 1.0 IC/IB = 10 TJ = 25°C tr @ VCC = 10 V 0.5 0.3 0.1 0.05 0.05 0.3 0.5 td @ VEB(off) = 2.0 V 0.03 0.7 2.0 0.07 0.7 tr @ VCC = 30 V 0.05 0.7 tf @ VCC = 10 V tf @ VCC = 30 V 0.07 1.0 0.5 0.3 0.1 0.05 0.03 0.7 2.0 0.2 0.1 3.0 1.0 0.05 0.3 0.5 0.07 0.7 2.0 0.2 Figure 5. Active Region Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE, (VOLTS) 10 0.1 10 SECOND BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25°C BONDING WIRE LIMITED 1.0 20 100 40 3.0 4.0 0.1 TIP29B, 30B TIP29C, 30C TJ = 150°C CURVES APPLY BELOW RATED VCEO 1 ms dc 5 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE opera- tion; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
Podobny numer części - TIP29C |
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Podobny opis - TIP29C |
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