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1 / 4 page 1 Motorola Bipolar Power Transistor Device Data Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Compact TO–220 AB package. MAXIMUM RATINGS Rating Symbol TIP29B TIP30B TIP29C TIP30C Unit Rating Symbol TIP30B TIP30C Unit Collector–Emitter Voltage VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 1.0 3.0 Adc Base Current IB 0.4 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 30 0.24 Watts W/ _C Total Power Dissipation @ TA = 25_C Derate above 25 _C PD 2.0 0.016 Watts W/ _C Unclamped Inductive Load Energy (See Note 3) E 32 mJ Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R θJA 62.5 _C/W Thermal Resistance, Junction to Case R θJC 4.167 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) TIP29B, TIP30B (IC = 30 mAdc, IB = 0) TIP29C, TIP30C VCEO(sus) 80 100 — — Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO — 0.3 mAdc Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) TIP29B, TIP30B (VCE = 100 Vdc, VEB = 0) TIP29C, TIP30C ICES — — 200 200 µAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 40 15 — 75 — Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) — 0.7 Vdc Base–Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) — 1.3 Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 — MHz Small–Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 — — (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. (2) fT = hfe• ftest. (3) This rating based on testing with LC = 20 mH, RBE = 100 Ω, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP29B/D © Motorola, Inc. 1995 TIP29B TIP29C TIP30B TIP30C 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80 – 100 VOLTS 30 WATTS NPN PNP CASE 221A–06 TO–220AB REV 1 |
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