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SI6862DQ Arkusz danych(PDF) 3 Page - Vishay Siliconix

Numer części SI6862DQ
Szczegółowy opis  Current-Sensing Power MOSFETs
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AN606
Vishay Siliconix
Document Number: 71991
17-Dec-03
www.vishay.com
3
FIGURE 3. Normalized rm(on) for the Sense Die
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
−50 −25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 25 A
TJ − Junction Temperature (_C)
DESIGN EQUATIONS
The following three equations enable circuit design and
analysis.
ISENSE = x ID/r
VDS = ISENSE x [rm(on) + RSENSE] or
VDS = ID x rDS(on)/(rm(on) + RSENSE)
VSENSE = ISENSE x RSENSE or
VSENSE = VDS x RSENSE/(rm(on) + RSENSE)
Where ISENSE
Current flowing out of sense terminal
r
Current-sensing ratio
ID
Drain-source current
VDS
Drain-source voltage
rm(on)
Mirror active resistance
RSENSE External current-sense resistor
Application Aspects and Design Examples
The current-sense ratio r, even though fixed by design, is
dependent
on
manufacturing
process
variations.
Furthermore, mirror active resistance rm(on) depends on circuit
parameters VGS and ID and junction temperature TJ. As a
result, a practical design can realize an accuracy of 15% —
20% for current sensing. Accordingly, the current-sensing
MOSFET is most suitable for supervisory functions such as
overcurrent and/or short-circuit protection.
Three keys to a successful design are to:
1. have an adequate margin between the normal
operating-current value and the trip-current value;
2. use a minimum value of the ISENSE signal at the maximum
value of ID; and
3. use a fast comparator with hysterisis to control and protect
the MOSFET.
Typical schematic configurations for implementing the current
sense are shown in Figure 4 and Figure 5.
The Virtual Earth Sensing Scheme, Figure 4, is suitable for
applications aiming at higher noise immunity and speed. This
approach also improves measurement accuracy by
eliminating the sense resistor. However, a dual power supply
and inverted (negative) output signal are the price designers
pay for deriving these benefits.
The Resistor Sensing Scheme shown in Figure 5 is a quite
simple and economical approach. The accuracy of current
measurement is affected by the introduction of an external
sense resistor RS. However, the latter aids in lowering the
temperature sensitivity of the current-sense signal.
V1
G
VDD
S
Sense
Kelvin
Load
R1
Stray
Resistance
R2
R3
+
D
IL
G
VDD
S
Sense
Kelvin
Load
+
V1
D
IL
−V
+V
FIGURE 4. Virtual Earth Sensing Scheme
FIGURE 5. Resistor Sensing Scheme


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