2SD1250 datasheet(1/2 Pages) PANASONIC

Numer części	2SD1250

Szczegółowy opis	Silicon PNP epitaxial planar type(For power amplification)

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Producent	PANASONIC [Panasonic Semiconductor]

Strona internetowa	http://www.panasonic.com/industrial/

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Power Transistors

2SB928, 2SB928A

Silicon PNP epitaxial planar type

For power amplification

For TV vartical deflection output

Complementary to 2SD1250 and 2SD1250A

s Features

q

High collector to emitter VCEO

q

High collector power dissipation PC

q

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–200

–150

–180

–6

–3

–2

30

1.3

150

–55 to +150

Unit

V

A

W

˚C

2SB928

2SB928A

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to base voltage

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Symbol

ICBO

IEBO

VCBO

VCEO

VEBO

hFE1

*

hFE2

VBE

VCE(sat)

fT

Conditions

VCB = –200V, IE = 0

VEB = –4V, IC = 0

IC = –500µA, IE = 0

IC = –5mA, IB = 0

IE = –500µA, IC = 0

VCE = –10V, IC = –150mA

VCE = –10V, IC = –400mA

IC = –500mA, IB = –50mA

VCE = –10V, IC = – 0.5A, f = 10MHz

min

–200

–150

–180

–6

60

50

typ

30

max

–50

240

–1

Unit

µA

V

MHz

2SB928

2SB928A

*h

FE1 Rank classification

Rank

Q

P

hFE1

60 to 140

100 to 240

Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.

Unit: mm

1:Base

2:Collector

3:Emitter

N Type Package

8.5

±0.2

6.0

±0.5

1.5max.

0.8

±0.1

5.08

±0.5

2.54

±0.3

1.1max.

0.5max.

1.0

±0.1

3.4

±0.3

2

13

Unit: mm

8.5

±0.2

6.0

±0.3

3.4

±0.3

2.54

±0.3

5.08

±0.5

1.0

±0.1

0.8

±0.1

0 to 0.4

1.1 max.

R0.5

123

1:Base

2:Collector

3:Emitter

N Type Package (DS)

Podobny numer części - 2SD1250

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Panasonic Semiconductor	2SD1250	48Kb / 2P	Silicon NPN triple diffusion planar type(For power amplification)
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Podobny opis - 2SD1250

Producent	Numer części	Arkusz danych	Szczegółowy opis
Panasonic Semiconductor	2SB1643	56Kb / 3P	Silicon PNP epitaxial planar type(For power amplification)
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	2SB1299	53Kb / 3P	Silicon PNP epitaxial planar type(For power amplification)
	2SB1393	46Kb / 2P	Silicon PNP epitaxial planar type(For power amplification)
	2SB1553	52Kb / 3P	Silicon PNP epitaxial planar type(For power amplification)
	2SB1554	54Kb / 3P	Silicon PNP epitaxial planar type(For power amplification)
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