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Zakładka z wyszukiwarką danych komponentów |
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RSS085N05-TB Dane(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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RSS085N05-TB Datasheet(Arkusz danych) 4 Page - VBsemi Electronics Co.,Ltd |
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage VSD - Source-to-Drain Voltage (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 60 10 1 TJ = 150 °C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) VGS - Gate-to-Source Voltage (V) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02468 10 125 °C 25 °C ID = 12.4 A 0 30 50 10 20 Time (s) 1 600 10 40 0.1 0.001 100 0.01 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse DC 1s 10 s Limited byRDS(on)* 1ms BVDSS Limited 100 µs 10 ms 100 ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RSS085N05-TB 4 |
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