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RSS085N05-TB Dane(HTML) 5 Page - VBsemi Electronics Co.,Ltd

Numer części RSS085N05-TB
Szczegółowy opis  N-Channel 40-V (D-S) MOSFET
Pobierz  9 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RSS085N05-TB Datasheet(Arkusz danych) 5 Page - VBsemi Electronics Co.,Ltd

  RSS085N05-TB Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd RSS085N05-TB Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
0
1
2
3
4
5
6
25
50
75
100
125
150
TC - Case Temperature (°C)
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RSS085N05-TB
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