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RSS085N05-TB Dane(HTML) 2 Page - VBsemi Electronics Co.,Ltd

Numer części RSS085N05-TB
Szczegółowy opis  N-Channel 40-V (D-S) MOSFET
Pobierz  9 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RSS085N05-TB Datasheet(Arkusz danych) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
40
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
40
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
13
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 12.4 A
0.010
Ω
VGS = 4.5 V, ID = 10.8 A
0.012
Forward Transconductancea
gfs
VDS = 15 V, ID = 12.4 A
56
S
Dynamicb
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
2000
pF
Output Capacitance
Coss
260
Reverse Transfer Capacitance
Crss
150
Total Gate Charge
Qg
VDS = 10 V, VGS = 10 V, ID = 12.4 A
33
50
nC
VDS = 10 V, VGS = 4.5 V, ID = 12.4 A
15
23
Gate-Source Charge
Qgs
6.7
Gate-Drain Charge
Qgd
5.1
Gate Resistance
Rg
f = 1 MHz
1.4
2.1
Ω
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
25
40
ns
Rise Time
tr
12
20
Turn-Off Delay Time
td(off)
25
40
Fall Time
tf
10
15
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
10
15
Rise Time
tr
15
25
Turn-Off Delay Time
td(off)
30
45
Fall Time
tf
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
30
A
Pulse Diode Forward Current
ISM
50
Body Diode Voltage
VSD
IS = 10 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
26
52
nC
Reverse Recovery Fall Time
ta
17.5
ns
Reverse Recovery Rise Time
tb
12.5
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RSS085N05-TB
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