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RSU002N06T106 Arkusz danych(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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RSU002N06T106 Arkusz danych(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
4 / 8 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage Variance Over Temperature 1.2 1.5 1 100 1000 0.0 0.3 0.6 0.9 TJ = 125 °C VSD - Source-to-Drain Voltage (V) 10 TJ = - 55 °C VGS = 0 V TJ = 25 °C - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Junction Temperature (°C) On-Resistance vs. Gate-Source Voltage Single Pulse Power, Junction-to-Ambient 0 1 2 3 4 5 02468 10 VGS - Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA 0.01 0 1 2.5 3 100 600 0.1 Time (s) 1.5 2 0.5 1 10 TA = 25 °C Normalized Thermal Transient Impedance, Junction-to-Ambient 10 10-3 10-2 1 10 600 10-1 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 350 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RSU002N06T106 4 |
Podobny numer części - RSU002N06T106 |
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Podobny opis - RSU002N06T106 |
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