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RTW060N03 Dane(HTML) 5 Page - VBsemi Electronics Co.,Ltd

Numer części RTW060N03
Szczegółowy opis  N-Channel 30 V (D-S) MOSFET
Pobierz  7 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RTW060N03 Datasheet(Arkusz danych) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Package Limited
Power Derating
C - Case Temperature (°C)
T
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10- 4
10- 3
10- 2
10- 1
1
10
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
RTW060N03
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
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