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RTW060N03 Dane(HTML) 1 Page - VBsemi Electronics Co.,Ltd

Numer części RTW060N03
Szczegółowy opis  N-Channel 30 V (D-S) MOSFET
Pobierz  7 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RTW060N03 Datasheet(Arkusz danych) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 30 V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
•100 % Rg and UIS Tested
APPLICATIONS
Notebook PC Core
VRM/POL
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is
80 A.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a, e
Qg (Typ.)
30
0.00
3 at VGS = 10 V
80
71 nC
0.00
5 at VGS = 4.5 V
70
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
80a, e
A
TC = 70 °C
70e
TA = 25 °C
21b, c
TA = 70 °C
2
0.8b, c
Pulsed Drain Current
IDM
250
Avalanche Current Pulse
L = 0.1 mH
IAS
26
Single Pulse Avalanche Energy
EAS
53.2
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
IS
80a, e
A
TA = 25 °C
2.76b, c
Maximum Power Dissipation
TC = 25 °C
PD
2
10a
W
TC = 70 °C
1
55
TA = 25 °C
3.
35b, c
TA = 70 °C
2.
13b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
 10 s
RthJA
41
50
°C/W
Maximum Junction-to-Case
Steady State
RthJC
0.
7
0.
9
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
RTW060N03
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
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