RU1H35L datasheet(1/8 Pages) VBSEMI

Numer części	RU1H35L

Szczegółowy opis	N-Channel 100-V (D-S) MOSFET

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Producent	VBSEMI [VBsemi Electronics Co.,Ltd]

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FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

APPLICATIONS

• Primary Side Switch

•

Isolated DC/DC Converter

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

Qg (Typ.)

100

0.0185 at VGS = 10 V

60

38 nC

S

GD

Top View

TO-252

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

60a

A

TC = 100 °C

45

TA = 25 °C

9.2b

TA = 100 °C

6.8b

Pulsed Drain Current

IDM

140

Continuous Source-Drain Diode Current

TC = 25 °C

IS

60a

TA = 25 °C

2b

Single Pulse Avalanche Current

L = 0.1 mH

IAS

45

Avalanche Energy

EAS

101

mJ

Maximum Power Dissipation

TC = 25 °C

PD

136.4

W

TC = 100 °C

68.2

TA = 25 °C

3b

TA = 100 °C

1.5b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb

Steady State

RthJA

40

50

°C/W

Maximum Junction-to-Case

RthJC

0.85

1.1

N-Channel 100-V (D-S) MOSFET

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RU1H35L

1

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