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RU6H5L Dane(HTML) 7 Page - VBsemi Electronics Co.,Ltd

Numer części RU6H5L
Szczegółowy opis  Power MOSFET
Pobierz  9 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU6H5L Datasheet(Arkusz danych) 7 Page - VBsemi Electronics Co.,Ltd

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Fig. 14 - For N-Channel
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor crurent
D =
P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
RG
VDD
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU6H5L
7


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