2SD1256 datasheet(1/3 Pages) PANASONIC

Numer części	2SD1256

Szczegółowy opis	Silicon PNP epitaxial planar type(For power switching)

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Producent	PANASONIC [Panasonic Semiconductor]

Strona internetowa	http://www.panasonic.com/industrial/

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1

Power Transistors

2SB933

Silicon PNP epitaxial planar type

For power switching

Complementary to 2SD1256

s Features

q

Low collector to emitter saturation voltage VCE(sat)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Large collector current IC

q

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–130

–80

–7

–10

–5

40

1.3

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

*

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = –100V, IE = 0

VEB = –5V, IC = 0

IC = –10mA, IB = 0

VCE = –2V, IC = – 0.1A

VCE = –2V, IC = –2A

IC = –4A, IB = – 0.2A

VCE = –10V, IC = – 0.5A, f = 10MHz

IC = –2A, IB1 = – 0.2A, IB2 = 0.2A

min

–80

45

90

typ

30

0.13

1.5

0.13

max

–10

–50

260

– 0.5

–1.5

Unit

µA

V

MHz

µs

*h

FE2 Rank classification

Rank

Q

P

hFE2

90 to 180

130 to 260

TC=25°C

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

N Type Package

8.5

±0.2

6.0

±0.5

1.5max.

0.8

±0.1

5.08

±0.5

2.54

±0.3

1.1max.

0.5max.

1.0

±0.1

3.4

±0.3

2

13

Unit: mm

8.5

±0.2

6.0

±0.3

3.4

±0.3

2.54

±0.3

5.08

±0.5

1.0

±0.1

0.8

±0.1

0 to 0.4

1.1 max.

R0.5

123

1:Base

2:Collector

3:Emitter

N Type Package (DS)

Podobny numer części - 2SD1256

Producent	Numer części	Arkusz danych	Szczegółowy opis
Panasonic Semiconductor	2SD1256	58Kb / 3P	Silicon NPN epitaxial planar type(For power switching)
Guangdong Kexin Industr...	2SD1256	40Kb / 1P	Silicon NPN Epitaxial Planar Type
	2SD1256-P	1Mb / 3P	NPN Transistors
	2SD1256-Q	1Mb / 3P	NPN Transistors
	2SD1256-R	1Mb / 3P	NPN Transistors

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Podobny opis - 2SD1256

Producent	Numer części	Arkusz danych	Szczegółowy opis
Panasonic Semiconductor	2SB944	55Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB945	55Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB946	55Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB1607	55Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB1154	61Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB1156	61Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB1155	61Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB932	58Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB943	55Kb / 3P	Silicon PNP epitaxial planar type(For power switching)
	2SB931	57Kb / 3P	Silicon PNP epitaxial planar type(For power switching)

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