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2SC2206 Arkusz danych(PDF) 1 Page - Panasonic Semiconductor

Numer części 2SC2206
Szczegółowy opis  Silicon NPN epitaxial planer type(For high-frequency amplification)
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Producent  PANASONIC [Panasonic Semiconductor]
Strona internetowa  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC2206 Arkusz danych(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC2206
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1254
s Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency fT.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–71
3:Emitter
M Type Mold Package
6.9
±0.1
0.55
±0.1
0.45
±0.05
2.5
±0.1
1.0
1.5
1.5 R0.9
R0.9
0.85
2.5
2.5
1
2
3
Symbol
VCBO
VCEO
CEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
VBE
fT
NF
Cre
Zrb
Conditions
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = –1mA
IC = 10mA, IB = 1mA
VCE = 10V, IC = 1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 5MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –1mA, f = 2MHz
min
30
20
5
70
150
typ
0.1
0.7
300
2.8
max
220
4
1.5
50
Unit
V
V
V
V
V
MHz
dB
pF
*h
FE Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220


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