5N65L-TN3-R datasheet(1/5 Pages) DOINGTER

Numer części	5N65L-TN3-R

Szczegółowy opis	N-Channel MOSFET uses advanced trench technology

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Producent	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=650V,ID=5A,RDS(ON)<2.7Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

650

V

VGS

Gate-Source Voltage

±

30

V

ID

Continuous Drain Current-TC=25℃

5

A

Continuous Drain Current-TC=100℃

2.5

IDM

Pulsed Drain Current(Note 1)

25

A

EAS

Single Pulsed Avalanche Energy (Note 2)

80

mJ

IAR

Avalanche Current (Note 1)

5

A

EAR

Repetitive Avalanche Energy (Note 1)

4.5

mJ

dv/dt

Peak Diode Recovery dv/dt (Note 3)

5

V/ns

PD

Power Dissipation,

TC=25℃

24.5

W

Power Dissipation-Derate above 25°C

0.2

W/℃

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

D

S

G

5N65L-TN3-R

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