Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

NVH4L040N65S3F Arkusz danych(PDF) 5 Page - ON Semiconductor

Numer części NVH4L040N65S3F
Szczegółowy opis  MOSFET ??Single N-Channel, SUPERFET III, FRFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVH4L040N65S3F Arkusz danych(HTML) 5 Page - ON Semiconductor

  NVH4L040N65S3F Datasheet HTML 1Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 2Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 3Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 4Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 5Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 6Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 7Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 8Page - ON Semiconductor NVH4L040N65S3F Datasheet HTML 9Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 5 / 9 page
background image
NVH4L040N65S3F
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. RDS(ON) vs. Gate Voltage
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
10
9
8
7
6
5
4
0
20
60
80
120
140
160
200
160
120
80
40
0
−40
−80
0.6
0.8
1.0
1.2
t, RECTANGULAR PULSE DURATION (s)
1
0.1
0.01
0.001
0.0001
0.00001
0.001
0.01
0.1
1
10
VGS = VDS
ID = 2.1 mA
TA = 150°C
TA = 25°C
40
100
180
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
ZqJC(t) = r(t) x RqJC
RqJC = 0.28°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
ID = 32.5 A
Figure 15. Unclamped Inductive Switching
Capability
Figure 16. Transient Thermal Response Curve
tAV, TIME IN AVALANCHE (ms)
100
10
1
0.1
0.01
0.001
1
10
100
Starting TJ = 25°C
Starting TJ = 125°C


Podobny numer części - NVH4L040N65S3F

ProducentNumer częściArkusz danychSzczegółowy opis
logo
ON Semiconductor
NVH4L040N120M3S ONSEMI-NVH4L040N120M3S Datasheet
357Kb / 8P
   Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L
January, 2023 - Rev. 3
NVH4L040N120M3S ONSEMI-NVH4L040N120M3S Datasheet
359Kb / 8P
   Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L
February, 2023 - Rev. 4
NVH4L040N120M3S ONSEMI-NVH4L040N120M3S_V01 Datasheet
359Kb / 8P
   Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L
February, 2023 - Rev. 4
NVH4L040N120SC1 ONSEMI-NVH4L040N120SC1 Datasheet
282Kb / 8P
   MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A
April, 2020 ??Rev. 1
NVH4L040N120SC1 ONSEMI-NVH4L040N120SC1 Datasheet
363Kb / 8P
   Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 3
More results


Html Pages

1 2 3 4 5 6 7 8 9


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com