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NVH4L040N65S3F Arkusz danych(PDF) 5 Page - ON Semiconductor |
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5 / 9 page NVH4L040N65S3F www.onsemi.com 5 TYPICAL CHARACTERISTICS Figure 13. RDS(ON) vs. Gate Voltage Figure 14. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) 10 9 8 7 6 5 4 0 20 60 80 120 140 160 200 160 120 80 40 0 −40 −80 0.6 0.8 1.0 1.2 t, RECTANGULAR PULSE DURATION (s) 1 0.1 0.01 0.001 0.0001 0.00001 0.001 0.01 0.1 1 10 VGS = VDS ID = 2.1 mA TA = 150°C TA = 25°C 40 100 180 Single Pulse Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 ZqJC(t) = r(t) x RqJC RqJC = 0.28°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID = 32.5 A Figure 15. Unclamped Inductive Switching Capability Figure 16. Transient Thermal Response Curve tAV, TIME IN AVALANCHE (ms) 100 10 1 0.1 0.01 0.001 1 10 100 Starting TJ = 25°C Starting TJ = 125°C |
Podobny numer części - NVH4L040N65S3F |
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