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NVHL040N65S3 Arkusz danych(PDF) 3 Page - ON Semiconductor

Numer części NVHL040N65S3
Szczegółowy opis  MOSFET ??Power, N-Channel, SUPERFET III, Automotive, Easy-Drive
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Producent  ONSEMI [ON Semiconductor]
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)
Symbol
Unit
Max
Typ
Min
Test Conditions
Parameter
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
4740
pF
Coss
Output Capacitance
120
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS =0V
1154
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS =0V
171
pF
Qg(tot)
Total Gate Charge at 10 V
VDS = 400 V, ID = 32.5 A, VGS =10V
(Note 4)
136
nC
Qgs
Gate to Source Gate Charge
33
nC
Qgd
Gate to Drain “Miller” Charge
59
nC
ESR
Equivalent Series Resistance
f = 1 MHz
0.7
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
VDD = 400 V, ID = 32.5 A,
VGS =10V, Rg = 3.3 W
(Note 4)
35
ns
tr
Turn-On Rise Time
51
ns
td(off)
Turn-Off Delay Time
95
ns
tf
Turn-Off Fall Time
30
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Drain to Source Diode Forward Current
65
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
162.5
A
VSD
Drain to Source Diode Forward Voltage VGS =0V, ISD = 32.5 A
1.2
V
trr
Reverse Recovery Time
VGS =0V, ISD = 32.5 A,
dIF/dt = 100 A/ms
534
ns
Qrr
Reverse Recovery Charge
13.6
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.


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