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SIHP12N65E Arkusz danych(PDF) 6 Page - VBsemi Electronics Co.,Ltd |
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SIHP12N65E Arkusz danych(HTML) 6 Page - VBsemi Electronics Co.,Ltd |
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6 / 8 page  Fig. 19 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current V GS = 10 V a I SD Driver gate drive D.U.T. l SD waveform D.U.T. V DS waveform Inductor current D = P.W. Period + - + + + - - - Peak Diode Recovery dV/dt Test Circuit V DD • dV/dt controlled by R g • Driver same type as D.U.T. • I SD controlled by duty factor “D” • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer R g Note a. V GS = 5 V for logic level devices V DD www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 SIHP12N65E 6 |
Podobny numer części - SIHP12N65E |
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