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FW503 Arkusz danych(PDF) 2 Page - Sanyo Semicon Device |
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FW503 Arkusz danych(HTML) 2 Page - Sanyo Semicon Device |
2 / 5 page FW503 No.7312-2/5 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --20 V Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0 --10 µA Gate-to-Source Leakage Current IGSS VGSS=±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.3 --1.0 V Forward Transfer Admittance yfs VDS=--10V, ID=--3A 3.5 5 S RDS(on)1 ID=--3A, VGS=--4.5V 130 170 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--2.5A, VGS=--2.5V 170 240 m Ω RDS(on)3 ID=--0.1A, VGS=--1.8V 230 340 m Ω Input Capacitance Ciss VDS=--10V, f=1MHz 410 pF Output Capacitance Coss VDS=--10V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 40 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr See specified Test Circuit. 27 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 42 ns Fall Time tf See specified Test Circuit. 38 ns Total Gate Charge Qg VDS=--10V, VGS=--4.5V, ID=--3A 5.0 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4.5V, ID=--3A 0.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4.5V, ID=--3A 1.2 nC Diode Forward Voltage VSD IS=--3A, VGS=0 --1.0 --1.2 V [SBD] Reverse Voltage VR IR=1mA 15 V Forward Voltage VF1IF=0.5A 0.3 0.35 V VF2IF=1A 0.35 0.4 V Reverse Current IR VR=15V 500 µA Interterminal Capacitance C VR=10V, f=1MHz cycle 42 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 15 ns Electrical Connection Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID= --3A RL=3.3Ω VDD= --10V VOUT FW503 VIN 0V --4.5V VIN Duty ≤10% 50 Ω 100 Ω 10 Ω --5V trr 10 µs 876 5 (Top view) 123 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode |
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