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KM6161002BI Arkusz danych(PDF) 3 Page - Samsung semiconductor

Numer części KM6161002BI
Szczegółowy opis  64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
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Producent  SAMSUNG [Samsung semiconductor]
Strona internetowa  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM6161002BI Arkusz danych(HTML) 3 Page - Samsung semiconductor

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KM6161002B, KM6161002BI
CMOS SRAM
Rev 2.0
- 3 -
February 1998
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress r ating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this spec ification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V SS
VIN, VOUT
-0.5 to 7.0
V
Voltage on VCC Supply Relative to V SS
VCC
-0.5 to 7.0
V
Power Dissipation
PD
1.0
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
TA
0 to 70
°C
Industrial
TA
-40 to 85
°C
RECOMMENDED DC OPERATING CONDITIONS (TA= to 70
°C)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* VIL(Min) = -2.0V a.c(Pulse Width
≤6ns) for I≤20mA
** VIH(Max) = VCC + 2.0V a.c (Pulse Width
≤6ns) for I≤20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.2
-
VCC+0.5**
V
Input Low Voltage
VIL
-0.5*
-
0.8
V
DC AND OPERATING CHARACTERISTICS (TA=0 to 70
°C, Vcc=5.0V±10%, unless otherwise specified)
NOTE: The above parameters are also guaranteed at industrial temperature range.
* VCC=5.0V, Temp.=25
°C
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN=VSS to VCC
-2
2
µA
Output Leakage Current
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
CS=VIL, VIN = VIH or VIL, IOUT=0mA
8ns
-
200
mA
10ns
-
195
12ns
-
190
Standby Current
ISB
Min. Cycle, CS=VIH
-
50
mA
ISB1
f=0MHz, CS
≥VCC-0.2V,
VIN
≥VCC-0.2V or VIN ≤0.2V
-
10
mA
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
VOH1*
IOH1=-0.1mA
-
3.95
V
CAPACITANCE*(TA=25
°C , f=1.0MHz)
* NOTE : Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
CI/O
VI/O=0V
-
8
pF
Input Capacitance
CIN
VIN=0V
-
6
pF


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