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2SD1263A Arkusz danych(PDF) 1 Page - Panasonic Semiconductor |
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2SD1263A Arkusz danych(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification s Features q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 350 400 250 300 5 1.5 0.75 35 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD1263 2SD1263A 2SD1263 2SD1263A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICES ICEO IEBO VCEO hFE1 * hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V min 250 300 70 10 typ 30 0.5 2 0.5 max 1 1 1 1 1 250 1.5 1 Unit mA mA mA V V V MHz µs µs µs 2SD1263 2SD1263A 2SD1263 2SD1263A 2SD1263 2SD1263A *h FE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
Podobny numer części - 2SD1263A |
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Podobny opis - 2SD1263A |
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