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2SD1263A Arkusz danych(PDF) 1 Page - Panasonic Semiconductor

Numer części 2SD1263A
Szczegółowy opis  Silicon NPN triple diffusion planar type(For power amplification)
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Producent  PANASONIC [Panasonic Semiconductor]
Strona internetowa  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1263A Arkusz danych(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
s Features
q
High collector to base voltage VCBO
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
350
400
250
300
5
1.5
0.75
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD1263
2SD1263A
2SD1263
2SD1263A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICES
ICEO
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
min
250
300
70
10
typ
30
0.5
2
0.5
max
1
1
1
1
1
250
1.5
1
Unit
mA
mA
mA
V
V
V
MHz
µs
µs
µs
2SD1263
2SD1263A
2SD1263
2SD1263A
2SD1263
2SD1263A
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
φ3.1±0.1


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