2SD1457 datasheet(2/2 Pages) PANASONIC

Numer części	2SD1457

Szczegółowy opis	Silicon NPN triple diffusion planar type Darlington(For power amplification)

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Producent	PANASONIC [Panasonic Semiconductor]

Strona internetowa	http://www.panasonic.com/industrial/

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2

Power Transistors

2SD1457, 2SD1457A

PC —Ta

IC —VCE

VCE(sat) —IC

VBE(sat) —IC

hFE —IC

Cob —VCB

Area of safe operation (ASO)

Rth(t) —t

0

150

125

100

25

75

50

0

100

80

60

40

20

(1) T

C=Ta

(2) With a 100

× 100 × 2mm

Al heat sink

(3) With a 50

× 50 × 2mm

Al heat sink

(P

C=3.0W)

(1)

(2)

(3)

Ambient temperature Ta (˚C)

06

5

4

13

2

0

5

4

3

2

1

T

C=25˚C

I

B=2.0mA

0.2mA

0.4mA

0.6mA

0.8mA

1.0mA

1.2mA

1.4mA

1.6mA

1.8mA

Collector to emitter voltage V

CE

(V)

0.01

0.1

1

10

0.03

0.3

3

0.01

0.03

0.1

0.3

1

3

10

30

100

I

C/IB=50

T

C=100˚C

25˚C

–25˚C

Collector current I

C

(A)

0.01

0.1

1

10

0.03

0.3

3

0.01

0.03

0.1

0.3

1

3

10

30

100

I

C/IB=50

T

C=–25˚C

25˚C

100˚C

Collector current I

C

(A)

0.01

0.1

1

10

0.03

0.3

3

10

30

100

300

1000

3000

10000

30000

100000

V

CE=2V

25˚C

–25˚C

T

C=100˚C

Collector current I

C

(A)

0.1

1

10

100

0.3

3

30

1

3

10

30

100

300

1000

3000

10000

I

E=0

f=1MHz

T

C=25˚C

Collector to base voltage V

CB

(V)

1

10

100

1000

3

30

300

0.01

0.03

0.1

0.3

1

3

10

30

100

Non repetitive pulse

T

C=25˚C

I

CP

I

C

0.1ms

20ms

3ms

t=1ms

DC

Collector to emitter voltage V

CE

(V)

10–3

102

10–2

1

10–1

10

103

104

10–1

1

10

102

103

(1)

(2)

(1) P

T=10V × 0.3A (3W) and without heat sink

(2) P

T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink

Time t (s)

Podobny numer części - 2SD1457

Producent	Numer części	Arkusz danych	Szczegółowy opis
Savantic, Inc.	2SD1457	120Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SD1457	132Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SD1457	121Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SD1457A	120Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SD1457A	132Kb / 3P	Silicon NPN Power Transistors

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Podobny opis - 2SD1457

Producent	Numer części	Arkusz danych	Szczegółowy opis
Panasonic Semiconductor	2SD2255	55Kb / 3P	Silicon NPN triple diffusion planar type Darlington For power amplification
	2SD1275	62Kb / 2P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD1276	62Kb / 2P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD2138	61Kb / 2P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD2250	57Kb / 3P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD2273	56Kb / 3P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD1260	64Kb / 2P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD1446	63Kb / 2P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD1895	54Kb / 3P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD2222	72Kb / 3P	Silicon NPN triple diffusion planar type Darlington(For power amplification)
	2SD1611	64Kb / 2P	Silicon NPN triple diffusion planar type Darlington(For power amplification)

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2SD1457 Arkusz danych(PDF) 2 Page - Panasonic Semiconductor

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