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GT20J121 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

Numer części GT20J121
Szczegółowy opis  Discrete IGBTs Silicon N-Channel IGBT
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

GT20J121 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

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GT20J121
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Taaaa = 25
= 25
= 25
= 25
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Symbol
IGES
ICES
VGE(OFF)
VCE(sat)
VCE(sat)
Test Condition
VGE = ±25 V, VCE = 0 V
VCE = 600 V, VGE = 0 V
IC = 20 mA, VCE = 5 V
IC = 20 A, VGE = 15 V
IC = 40 A, VGE = 15 V
Min
4.5
Typ.
1.25
1.45
Max
±100
1.0
7.5
1.80
Unit
nA
mA
V
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Taaaa = 25
= 25
= 25
= 25
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
Characteristics
Input capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Cies
tr
ton
tf
toff
Test Condition
VCE = 10 V, VGE = 0 V,
f = 1 MHz
Resistive load
VCC = 300 V, IC = 20 A,
VGG = ±15 V, RG = 39 Ω
See Fig. 6.2.1 and 6.2.2.
Min
Typ.
2700
0.10
0.17
0.27
0.60
Max
0.50
Unit
pF
µs
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Fig.
Fig.
Fig.
Fig. 6.2.2
6.2.2
6.2.2
6.2.2 Timing Chart of Switching Time
Timing Chart of Switching Time
Timing Chart of Switching Time
Timing Chart of Switching Time
7.
7.
7.
7. Marking (Note)
Marking (Note)
Marking (Note)
Marking (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-01-07
Rev.2.0


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