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GT20J121 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części GT20J121
Szczegółowy opis  Discrete IGBTs Silicon N-Channel IGBT
Download  7 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

GT20J121 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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GT20J121
1
Discrete IGBTs Silicon N-Channel IGBT
GT20J121
GT20J121
GT20J121
GT20J121
Start of commercial production
2012-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
Dedicated to Current-Resonant Inverter Switching Applications
Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note:
The product(s) described herein should not be used for any other application.
2.
2.
2.
2. Features
Features
Features
Features
(1)
Sixth generation
(2)
Enhancement mode
(3)
High-speed switching: tf = 0.27 µs (typ.) (IC = 20 A)
(4)
Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A)
(5)
TO-220SIS (Toshiba package name)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
TO-220SIS
1: Gate
2: Collector
3: Emitter
2014-01-07
Rev.2.0


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