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GT20J121 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części GT20J121
Szczegółowy opis  Discrete IGBTs Silicon N-Channel IGBT
Download  7 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

GT20J121 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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GT20J121
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (Taaaa = 25
= 25
= 25
= 25
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (10 ms)
Collector current (1 ms)
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
(Ta = 25)
(Tc = 25)
(Note 1)
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
600
±25
20
60
80
2
40
150
-55 to 150
Unit
V
A
W
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: Ensure that the junction temperature does not exceed 150 .
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
Symbol
Rth(j-a)
Rth(j-c)
Max
62.5
3.125
Unit
/W
2014-01-07
Rev.2.0


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