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GT50JR21 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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GT50JR21 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page GT50JR21 2 4. 4. 4. 4. Absolute Maximum Ratings (Note) (T Absolute Maximum Ratings (Note) (T Absolute Maximum Ratings (Note) (T Absolute Maximum Ratings (Note) (Taaaa = 25 = 25 = 25 = 25 , unless otherwise specified) , unless otherwise specified) , unless otherwise specified) , unless otherwise specified) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25) (Tc = 100) (Tc = 25) (Tc = 100) (Note 1) Symbol VCES VGES IC ICP IF IFP PC Tj Tstg TOR Rating 600 ±25 50 49 100 40 100 230 115 175 -55 to 175 0.8 Unit V A W Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: Ensure that the junction temperature does not exceed 175. 5. 5. 5. 5. Thermal Characteristics Thermal Characteristics Thermal Characteristics Thermal Characteristics Characteristics Junction-to-case thermal resistance Symbol Rth(j-c) Max 0.65 Unit /W 2014-01-07 Rev.2.0 |
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Podobny opis - GT50JR21 |
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