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TRS6E65F Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części TRS6E65F
Szczegółowy opis  SiC Schottky Barrier Diode
Download  6 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TRS6E65F Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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TRS6E65F
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Repetitive peak reverse voltage
Forward DC current
Forward pulse current
Non-repetitive peak forward surge current
I2t limit value
Junction temperature
Storage temperature
Mounting torque
Symbol
VRRM
IF(DC)
IFP
IFSM
I2t
Tj
Tstg
TOR
Note
(Note 1)
(Note 2)
Rating
650
6
60
55
15.1
175
-55 to 175
0.6
Unit
V
A
A
A
A2s
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: t = 50 µs
Note 2: f = 50 Hz (half-sine wave t = 10 ms)
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Thermal resistance (junction-to-case)
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-c)
Rth(j-a)
Test Condition
Max
2.2
89
Unit
/W
/W
6.
6.
6.
6. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Forward voltage
Forward voltage
Reverse current
Junction capacitance
Symbol
VF (1)
VF (2)
IR
Cj
Test Condition
IF = 3 A (pulse measurement)
IF = 6 A (pulse measurement)
VR = 650 V (pulse measurement)
VR = 650 V, f = 1 MHz
Min
Typ.
1.2
1.45
0.3
22
Max
1.6
30
Unit
V
V
µA
pF
2018-06-27
Rev.2.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation


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