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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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TRS8E65F Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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TRS8E65F Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page  TRS8E65F 1 SiC Schottky Barrier Diode TRS8E65F TRS8E65F TRS8E65F TRS8E65F Start of commercial production 2016-07 1. 1. 1. 1. Applications Applications Applications Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. 2. 2. 2. Features Features Features Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 69A (Max) (3) The junction capacitance is small : Cj = 28 pF (Typ.) (4) The reverse current is small. : IR = 0.4 µA (Typ.) 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit TO-220-2L 1: Cathode 2: Anode 2018-06-27 Rev.2.0 ©2016-2018 Toshiba Electronic Devices & Storage Corporation |
Podobny numer części - TRS8E65F |
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Podobny opis - TRS8E65F |
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