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2SD1975 Arkusz danych(PDF) 1 Page - Panasonic Semiconductor |
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2SD1975 Arkusz danych(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A s Features q Satisfactory foward current transfer ratio hFE collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier s Absolute Maximum Ratings (T C=25˚C) s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE1 hFE2 * hFE3 VBE VCE(sat) fT Cob Conditions VCB = 180V, IE = 0 VCB = 200V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 10A, IB = 1A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz min 20 60 20 typ 20 200 max 50 50 50 200 1.8 2.5 Unit µA µA V V MHz pF *h FE2 Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 Unit: mm 1:Base 2:Collector 3:Emitter TOP–3L Package 20.0 ±0.5 10.9 ±0.5 123 2.0 ±0.3 3.0 ±0.3 1.0 ±0.2 5.0 ±0.3 3.0 5.45 ±0.3 0.6 ±0.2 1.5 2.7 ±0.3 1.5 φ 3.3±0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 180 200 180 200 5 25 15 150 3.5 150 –55 to +150 Unit V V V A A W ˚C ˚C 2SD1975 2SD1975A 2SD1975 2SD1975A TC=25°C Ta=25 °C 2SD1975 2SD1975A |
Podobny numer części - 2SD1975 |
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Podobny opis - 2SD1975 |
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