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2SD2029 Arkusz danych(PDF) 2 Page - Panasonic Semiconductor

Numer części 2SD2029
Szczegółowy opis  Silicon NPN triple diffusion planar type(For high power amplification)
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Producent  PANASONIC [Panasonic Semiconductor]
Strona internetowa  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2029 Arkusz danych(HTML) 2 Page - Panasonic Semiconductor

  2SD2029 Datasheet HTML 1Page - Panasonic Semiconductor 2SD2029 Datasheet HTML 2Page - Panasonic Semiconductor 2SD2029 Datasheet HTML 3Page - Panasonic Semiconductor  
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2
Power Transistors
2SD2029
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
200
150
50
100
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=3.5W)
(1)
(3)
(2)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
20
16
12
8
4
T
C=25˚C
I
B=800mA
700mA
600mA
500mA
400mA
300mA
200mA
100mA
50mA
Collector to emitter voltage V
CE
(V)
02.4
2.0
1.6
0.4
1.2
0.8
0
20
16
12
8
4
T
C=–25˚C
25˚C
100˚C
V
CE=5V
Base to emitter voltage V
BE
(V)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C/IB=10
T
C=100˚C
–25˚C
25˚C
Collector current I
C
(A)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
V
CE=5V
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=5V
f=1MHz
T
C=25˚C
Collector current I
C
(A)
1
3
10
30
100
10
10000
1000
100
30
300
3000
I
E=0
f=1MHz
T
C=25˚C
Collector to base voltage V
CB
(V)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25˚C
I
CP
I
C
t=10ms
100ms
DC
Collector to emitter voltage V
CE
(V)


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