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2SD2029 Arkusz danych(PDF) 2 Page - Panasonic Semiconductor |
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2SD2029 Arkusz danych(HTML) 2 Page - Panasonic Semiconductor |
2 / 3 page 2 Power Transistors 2SD2029 PC —Ta IC —VCE IC —VBE VCE(sat) —IC hFE —IC fT —IC Cob —VCB Area of safe operation (ASO) 0 160 40 120 80 140 20 100 60 0 200 150 50 100 (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (P C=3.5W) (1) (3) (2) Ambient temperature Ta (˚C) 012 10 8 26 4 0 20 16 12 8 4 T C=25˚C I B=800mA 700mA 600mA 500mA 400mA 300mA 200mA 100mA 50mA Collector to emitter voltage V CE (V) 02.4 2.0 1.6 0.4 1.2 0.8 0 20 16 12 8 4 T C=–25˚C 25˚C 100˚C V CE=5V Base to emitter voltage V BE (V) 0.1 1 10 100 0.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 I C/IB=10 T C=100˚C –25˚C 25˚C Collector current I C (A) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 V CE=5V T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 V CE=5V f=1MHz T C=25˚C Collector current I C (A) 1 3 10 30 100 10 10000 1000 100 30 300 3000 I E=0 f=1MHz T C=25˚C Collector to base voltage V CB (V) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 Non repetitive pulse T C=25˚C I CP I C t=10ms 100ms DC Collector to emitter voltage V CE (V) |
Podobny numer części - 2SD2029 |
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Podobny opis - 2SD2029 |
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