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2SD968 Arkusz danych(PDF) 1 Page - Panasonic Semiconductor |
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2SD968 Arkusz danych(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A s Features q High collector to emitter voltage VCEO. q Large collector power dissipation PC. q Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5 ±0.1 3.0 ±0.15 1.5 ±0.1 0.4 ±0.08 0.5 ±0.08 1.5 ±0.1 0.4 ±0.04 1.6 ±0.2 45 ° marking 321 Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings 100 120 100 120 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 2SD968 2SD968A 2SD968 2SD968A s Electrical Characteristics (Ta=25˚C) Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA *2 VCE = 5V, IC = 500mA *2 IC = 500mA, IB = 50mA *2 IC = 500mA, IB = 50mA *2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 100 120 5 90 50 typ 100 0.2 0.85 120 11 max 220 0.6 1.2 20 Unit V V V V MHz pF *1h FE1 Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 2SD968 WQ WR 2SD968A VQ VR Marking symbol : W(2SD968) V(2SD968A) Marking Symbol * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2SD968 2SD968A *2 Pulse measurement |
Podobny numer części - 2SD968 |
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Podobny opis - 2SD968 |
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