1

Silicon MOS FETs (Small Signal)

unit: mm

2SK601

Silicon N-Channel MOS FET

For switching

s Features

q Low ON-resistance R

DS(on)

q High-speed switching

q Allowing to be driven directly by CMOS and TTL

q Mini-power type package, allowing downsizing of the sets and

automatic insertion through the tape/magazine packing.

Parameter

Drain to Source voltage

Gate to Source voltage

Drain current

Max drain current

Allowable power dissipation

Channel temperature

Storage temperature

Symbol

Ratings

80

20

±0.5

±1

1

150

−55 to +150

Unit

V

V

A

A

W

°C

°C

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Turn-on time

Turn-off time

Symbol

1

2

2

Conditions

min

80

1.5

typ

2

300

45

30

8

15

20

Unit

µA

µA

V

V

Ω

mS

pF

pF

pF

ns

ns

1: Gate

2: Drain

3: Source

EIAJ: SC-62

Mini-Power Type Package (3-pin)

Marking Symbol: O

max

10

0.1

3.5

4

more and the board thickness should be 1.7mm.

4.5±0.1

3.0±0.15

1.5±0.1

0.4±0.08

0.5±0.08

1.5±0.1

0.4±0.04

1.6±0.2

45˚

marking

321

t = 1

50

Ω

68

Ω

10%

90%

10%

90%