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SI7434DP-T1-E3 Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI7434DP-T1-E3 Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si7434DP Vishay Siliconix New Product www.vishay.com 4 Document Number: 72579 S-32408—Rev. A, 24-Nov-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10−3 10−2 1 10 600 10−1 10−4 100 0.001 0 1 80 100 20 10 0.01 Single Pulse Power, Juncion-to-Ambient Time (sec) 60 40 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.1 −1.5 −1.0 −0.5 0.0 0.5 1.0 −50 −25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ − Temperature (_C) Safe Operating Area, Junction-to-Case VDS − Drain-to-Source Voltage (V) 100 1 0.1 10 100 1000 0.001 10 1 ms 0.1 Limited by rDS(on) TC = 25_C Single Pulse 10 ms 100 ms dc 1 0.01 10 s 1 s |
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