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1N4151W-V-GS08 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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1N4151W-V-GS08 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85721 Rev. 1.2, 06-Apr-05 1N4151W-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Rectification Efficiency Measurement Circuit Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 4501) °C/W Junction temperature Tj 150 °C Storage temperature range TS - 65 to 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 50 mA VF 1.0 V Leakage current VR = 50 V IR 50 nA VR = 20 V, Tj = 150 °C IR 50 µA Reverse breakdown voltage IR = 5 µA (pulsed) V(BR)R 75 V Capacitance VF = VR = 0 V 2 pF Reverse recovery time IF = 10 mA to IR = 10 mA to IR = 1 mA trr 4ns IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr 2ns Rectification efficiency f = 100 MHz, VRF = 2 V ην 0.45 17436 60 Ω 5k Ω 2nF VO V =2V RF |
Podobny numer części - 1N4151W-V-GS08 |
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Podobny opis - 1N4151W-V-GS08 |
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