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IRFZ34NS Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRFZ34NS
Szczegółowy opis  HEXFET짰 Power MOSFET
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRFZ34NS Arkusz danych(HTML) 2 Page - International Rectifier

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IRFZ34NS/L
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.052 –––
V/°C
Reference to 25°C, ID = 1mA
…
RDS(ON)
Static Drain-to-Source On-Resistance
–––
––– 0.040
VGS = 10V, ID = 16A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.5
–––
–––
S
VDS = 25V, ID = 16A
–––
–––
25
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
Qg
Total Gate Charge
–––
–––
34
ID = 16A
Qgs
Gate-to-Source Charge
–––
–––
6.8
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
14
VGS = 10V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
7.0
–––
VDD = 28V
tr
Rise Time
–––
49
–––
ID = 16A
td(off)
Turn-Off Delay Time
–––
31
–––
RG = 18Ω
tf
Fall Time
–––
40
–––
RD = 1.8
Ω, See Fig. 10 „…
Between lead,
and center of die contact
Ciss
Input Capacitance
–––
700
–––
VGS = 0V
Coss
Output Capacitance
–––
240
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
100
–––
ƒ = 1.0MHz, See Fig. 5
…
IDSS
Drain-to-Source Leakage Current
IGSS
ns
µA
nA
nH
LS
Internal Source Inductance
–––
7.5
–––
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25°C, IS = 16A, VGS = 0V
„
trr
Reverse Recovery Time
–––
57
86
ns
TJ = 25°C, IF = 16A
Qrr
Reverse RecoveryCharge
–––
130
200
nC
di/dt = 100A/µs
„…
ton
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
100
–––
–––
29
A
S
D
G
‚ VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRFZ34N data and test conditions


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