©2005 Fairchild Semiconductor Corporation

1

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FQP44N10F Rev. A1

January 2006

FRFET

TM

FQP44N10F

100V N-Channel MOSFET

Features

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 85 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

•175

°C maximum junction temperature rating

Description

These N-Channel enhancement mode power field effect tran-

sist-ors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performanc-e, and withstand high energy pulse in the

avalanche and co-mmutation mode. These devices are well

suited for low voltage applications such as audio amplifier, high

efficiency switching DC/DC converters, and DC motor control.

Absolute Maximum Ratings

Thermal Characteristics

TO-220

FQP Series

G

S

D

D

G

S

Symbol

Parameter

FQP44N10F

Units

Drain-Source Voltage

100

V

Drain Current

43.5

A

30.8

A

Drain Current

- Pulsed

(Note 1)

174

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

530

mJ

Avalanche Current

(Note 1)

43.5

A

Repetitive Avalanche Energy

(Note 1)

14.6

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

15

V/ns

146

W

- Derate above 25°C

0.97

W/°C

Operating and Storage Temperature Range

-55 to +175

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQP44N10F

Units

Thermal Resistance, Junction-to-Case

1.03

°C/W

Thermal Resistance, Case-to-Sink

0.5

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W