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FQP44N10F Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FQP44N10F Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP44N10F Rev. A1 January 2006 FRFET TM FQP44N10F 100V N-Channel MOSFET Features • 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 85 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability •175 °C maximum junction temperature rating Description These N-Channel enhancement mode power field effect tran- sist-ors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc-e, and withstand high energy pulse in the avalanche and co-mmutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Absolute Maximum Ratings Thermal Characteristics TO-220 FQP Series G S D D G S Symbol Parameter FQP44N10F Units VDSS Drain-Source Voltage 100 V ID Drain Current - Continuous (TC = 25°C) 43.5 A - Continuous (TC = 100°C) 30.8 A IDM Drain Current - Pulsed (Note 1) 174 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ IAR Avalanche Current (Note 1) 43.5 A EAR Repetitive Avalanche Energy (Note 1) 14.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns PD Power Dissipation (TC = 25°C) 146 W - Derate above 25°C 0.97 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQP44N10F Units RθJC Thermal Resistance, Junction-to-Case 1.03 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W |
Podobny numer części - FQP44N10F |
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Podobny opis - FQP44N10F |
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