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FDS4897C Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDS4897C Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page November 2005 ©2005 Fairchild Semiconductor Corporation FDS4897C Rev C(W) www.fairchildsemi.com FDS4897C Dual N & P-Channel PowerTrench ® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application • Inverter • Power Supplies Features • Q1: N-Channel 6.2A, 40V R DS(on) = 29mΩ @ VGS = 10V R DS(on) = 36mΩ @ VGS = 4.5V • Q2: P-Channel –4.4A, –40V R DS(on) = 46mΩ @ VGS = –10V R DS(on) = 63mΩ @ VGS = –4.5V • High power handling capability in a widely used surface mount package • RoHS compliant S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 40 40 V VGSS Gate-Source Voltage ±20 ±20 V ID Drain Current - Continuous (Note 1a) 6.2 –4.4 A - Pulsed 20 –20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4897C FDS4897C 13” 12mm 2500 units |
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